We have now used nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) and surface photovoltage spectroscopy (SPS) with plasma processing and neutron irradiation, combined with temperature-dependent Hall effect measurements, to correlate the spectral features of deep level defect gap states in Ga 2O 3 with their physical and donor/acceptor nature. Multiple defect features that vary with growth and processing have been reported, 17–26 but the nature of native point defects in Ga 2O 3 is relatively unexplored.
#Will fityk 1.1.1 file open in 0.9.8 free#
11 These properties can be impacted by deep level defects that compensate free carriers, increase scattering that reduces carrier mobility, 13 form gap states 14 that “pin” Fermi levels, 15,16 and initiate trapping that limits breakdown voltage. 1,2 The ability to grow Ga 2O 3 by multiple techniques and to manufacture large-size, high-quality bulk wafers has led to rapidly expanding applications 3–12 chiefly because its large bandgap enables high breakdown electric fields estimated at 7–8 MV/cm, yet n-type doping ranging from intrinsic to degenerate is achievable.
The ultra-wide bandgap semiconductor Ga 2O 3 has now become a promising candidate for next generation high power electronics.
0 kommentar(er)
